二硫化鉭晶體（1T） TaS2（Tantalum Sulfide） -1T晶體尺寸：~8毫米電學(xué)性能：半導(dǎo)體，電荷密度波（CDW），Mott相晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = b = 0.336 nm, c = 0.590 nm, α = β = 90#176;, γ = 120#176;晶體類型：合成晶體純度：＞99.995%

二硫化鉭晶體(1T) TaS2(Tantalum Sulfide) -1T
晶體尺寸：~8毫米
電學(xué)性能：半導(dǎo)體，電荷密度波（CDW），Mott相
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a Tantalum Disulfide single crystal aligned along the (001) plane. XRD on the 1T-TaS2 was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal 1T-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 1T-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).