晶體尺寸：10毫米電學性能：半導體，拓撲絕緣體，熱電材料晶體結(jié)構(gòu)：單斜晶結(jié)構(gòu)晶胞參數(shù)：a = 1.430nm，B = 0.403nm，C = 0.986nm，α=γ= 90#176;，β= 95.40晶體類型：合成晶體純度：＞99.995%表征方法：XRD、拉曼、EDX

晶體尺寸：10毫米
電學性能：半導體，拓撲絕緣體，熱電材料
晶體結(jié)構(gòu)：單斜晶結(jié)構(gòu)
晶胞參數(shù)：a = 1.430nm，B = 0.403nm，C = 0.986nm，α=γ= 90°，β= 95.40
晶體類型：合成
晶體純度：＞99.995%
表征方法：XRD、拉曼、EDX
 

Powder X-ray diffraction (XRD) of a single crystal As2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal As2Te3 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal As2Te3. Measurement was performed with a 785 nm Raman system at room temperature.