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基于藍(lán)寶石襯底的全區(qū)域覆蓋的單層二硒化錸

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公司名稱 上海巨納科技有限公司
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2020年01月08日至 2020年02月08日

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模內(nèi)澆口分離自動化，降低對人的依賴度；傳統(tǒng)的塑膠模具開模后產(chǎn)品與澆口相連，需二道工序進(jìn)行人工剪切分離，模內(nèi)熱切模具將澆口分離提前至開模前，消除后續(xù)工序，有利于生產(chǎn)自動化，降低對人的依賴。

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This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates.

詳細(xì)信息在線詢價

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is highly crystalline, some regions also display significant crystalline anisotropy.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Sapphire c-cut (0001)
Coverage	Full monolayer coverage
Electrical properties	1.45 eV Anisotropic Semiconductor (Indirect Bandgap)
Crystal structure	Distorted Tetragonal Phase (1T’)
Unit cell parameters	a = 0.656 nm, b = 0.672 nm, c = 0.674 nm, α = 91.74°, β = 105°, γ = 119°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

Specifications

ReSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected ReSe2 using α-bombardment technique.

Supporting datasets [for * Full area ReSe2 monolayers on c-cut Sapphire]

Transmission electron images (TEM) and angle resolved Raman spectroscopy measurements acquired from CVD grown full area coverage ReSe2 monolayers on c-cut sapphire confirming crystalline anisotropy

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer ReSe2 on c-cut sapphire

Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples. Differential reflectance measurements clearly show bａnd gap at 1.45 eV for monolayer ReS2 consistent with the existing literature values. PL spectrum does not show any PL signal due to indirect bａnd nature.